• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Microelectronic structure comprising a mobile mass (2) mechanically connected to first (12) and a second (24) mechanical element by first (6) and second (14) mechanical connection means respectively, a polarization source (15) of the second mechanical connection means (14). The second mechanical connection means (14) comprise two connecting elements (18, 20) and a thermal reservoir (22) interposed between the connecting elements (18, 20), at least one of the connecting elements being in one piezoresistive material, at least one of the first and second connecting elements having thermoelasticity properties. The thermal reservoir (22) has a thermal capacity different from those of the connecting elements (18, 20). The second connecting means (14) and the moving mass (2) are arranged relative to each other so that a displacement of the moving mass (2) applies a mechanical stress to the second connecting means (14). ).
    公开号:FR3061166A1
    申请号:FR1663258
    申请日:2016-12-22
    公开日:2018-06-29
    发明作者:Guillaume JOURDAN；Guillaume Lehee
    申请人:Commissariat a lEnergie Atomique CEA；Safran Electronics and Defense SAS；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    @ Holder (s): ATOMIC AND ALTERNATIVE ENERGY COMMISSIONER Public establishment, SAFRAN ELECTRONICS & DEFENSE Simplified joint-stock company.
    O Extension request (s):
    & Agent (s): BREVALEX Limited liability company.
    * 54) MICROELECTRONIC STRUCTURE INCLUDING MEANS FOR CONTROLLING VISCOUS DAMPING.
    FR 3,061,166 - A1 (57) Microelectronic structure comprising a mobile mass (2) mechanically connected to first (12) and a second (24) mechanical element by first (6) and second (14) mechanical connection means respectively, a bias source (15) of the second mechanical connection means (14). The second mechanical connection means (14) comprise two connection elements (18, 20) and a thermal reservoir (22) interposed between the connection elements (18, 20), at least one of the connection elements being in one piezoresistive material, at least one of the first and second connecting elements having thermoelastic properties. The thermal reservoir (22) having a thermal capacity different from that of the connecting elements (18, 20). The second connecting means (14) and the movable mass (2) are arranged relative to each other so that a displacement of the movable mass (2) applies mechanical stress to the second connecting means (14 ).
    S1

    MICROELECTRONIC STRUCTURE COMPRISING VISCOUS DAMPING MEANS
    DESCRIPTION
    TECHNICAL AREA AND PRIOR ART
    The present invention relates to microelectromechanical structures and / or nanoelectromechanical structures with controlled viscous damping.
    Microelectromechanical systems or MEMS (Microelectromechanical System in Anglo-Saxon terminology) and nanoelectromechanical structures or NEMS (Nanoelectromechanical System in Anglo-Saxon terminology) comprise a fixed part and at least one mass movable relative to a substrate, capable of being vibrated under the effect of an external stimulus, forming a resonator.
    A mechanical resonator or oscillator arranged in a gaseous environment undergoes damping due to friction with the gas during the displacement of the moving mass, called viscous damping.
    The control of the processes of damping or dissipation of mechanical energy in a resonator makes it possible to increase the bandwidth of MEMS and NEMS by reducing the time interval necessary to find equilibrium with the external environment. More generally, the control of the bandwidth of a mechanical resonator can be exploited to produce tunable bandwidth filters. Finally, the compensation of viscous damping forces, via such a control, can lead the system to self-oscillation. This property can be exploited to produce electromechanical oscillators
    The control of viscous damping constitutes an effective means to modify the electromechanical response of a MEMS / NEMS structure. The mechanical behavior of a microsystem subjected to an external stimulus can be deeply redefined either in terms of response time to reach its steady state, sensitivity to disturbances close to the resonant frequency, or ability to produce a self-oscillating system.
    Several solutions exist to modify this viscous damping in which the resonator is located. Indeed, the modes of vibration which implement movements interacting with air knives are dominated by pneumatic damping processes when they are placed in air: for example beams in bending, masses in translation. In the vicinity of ambient pressure, the dissipation is very sensitive to the pressure level. However at low pressure, with the scarcity of molecules, the dissipation coefficient changes little. The quality factor of a MEMS can thus be controlled by the pressure level in a cavity in which the mobile element is located, obtained for example by hermetic sealing. This solution does not allow dynamic control of the quality factor.
    Furthermore, it does not allow independent control of two MEMS structures placed in identical cavities. For example, one may wish to co-integrate a device which requires a low quality factor, for example an accelerometer, and another device which, on the contrary, requires a high quality factor, for example a gyrometer. By lowering the pressure in the cavity, the two quality factors are influenced.
    Another solution is to perform active monitoring of the depreciation process in a MEMS. For this, an external viscous damping force is generated. Such a force is generated by means of a controllable actuator, via electronics, the control of which is proportional to the speed of the mobile mechanical system. For example, this can be achieved by using MEMS / NEMS motion detection means, a PID corrector (proportional, integral, differentiator) and an actuator, the whole forming a closed loop. This solution is for example described in the document Yücetaç M, Aaltonen L, Pulkkinen M, Salomaa J, Kalanti A, Halonen K. A charge balancing accelerometer interface with electrostatic damping. In: ESSCIRC (ESSCIRC), 2011 Proceedings of the. 2011. p. 291-4. A system implementing detection and actuation means of the capacitive type are described. Although very effective, this solution requires the use of electronics external to the mechanical system as well as MEMS / NEMS motion detection means. This results in a large footprint in terms of electronics and high energy consumption, which limits the use of this configuration.
    The document Lehee G, Souchon F, Riou JC, Bosseboeuf A, Jourdan G. Low power damping control ofa resonant sensor using back action in silicon nanowires. In: 2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS). 2016. p.99-102 describes a solution using the phenomenon of return action in a piezoresistive element or TPBA (Thermo piezoresistive Back action). It describes an oscillator comprising a mobile mass capable of oscillating in rotation in the plane and nano-gauges formed by nanobeams between the mass and the substrate. Different positions of the nanobeams relative to the axis of the pivot are tested. The nanojauges undergo compression or traction during the displacement of the mass. The nanobeams are made of silicon (SiNW) doped with boron. They are made of piezoresistive and thermoelastic material.
    The nanobeams are electrically polarized, they undergo a self-heating ΔΤ = R ttl Pj (I) which is proportional to the Joule power Pj = RI 2 with R th the thermal resistance of the beam and R the electrical resistance of the beam.
    Due to the oscillation of the mass, the nanobeams of length L undergo an elongation x.
    This elongation causes a modification of the electrical resistance of the beam by piezoresistivity:
    ÔR = n g R
    L
    The Joule power is modified according to δΡ = ÔRI 2 .
    The temperature of the beams evolves towards a new value, ie a variation of δΤ = R th I 2 ÔR (II).
    This results in a mechanical force in return produced by thermoelasticity: F = ΕαδΤ with E the Young's modulus of the material making up the nanobeams, and has its coefficient of thermal expansion.
    In the end, a force proportional to the movement of the MEMS structure is applied to the latter:
    F = EaR th I 2 n g R -
    A delay effect can be induced by the resistance and the thermal inertia of the nanobeams.
    Indeed, a thermal time constant T th = R ttl C th appears due to the limits of thermal energy flow between the system and the outside. This time constant can be seen as a delay in setting up a new temperature value. The temperature variation can be described by:
    δΤ = R th l 2 ÔR (t - Tth) ~ RthI 2 (ôR - TthÔR) F = EaR th I 2 n g R (j- - T tfl -J
    The return force produced by the measurement system then has a viscous term:
    F v - ΓρΑ χ . r ÎthEaRthI 2 n g R
    With Γ β / 1 = -------- A more detailed modeling of the problem shows that the harmonic response of the force has in reality the form:
    _ x - ÎT th X F ^ = E a ^^ R 1 + (MTa y
    The dissipation force plays an important role in the vicinity of the resonance frequency ω Γ of the MEMS / NEMS mechanical system. The effect will therefore be maximum when the time constant reaches a value such that:
    Indeed, the following borderline cases show:
    T th a> r "1, the system adopts a temperature which instantaneously depends on the position of MEMS / NEMS on the scale of the oscillation period.
    i th M r »1, the power modulation due to the movement produces a low temperature modulation of the improved TPBA structure. On the scale of the oscillation period, the amount of thermal energy exchanged between the TPBA beam and the electrical circuit is greatly reduced: the low temperature modulation generates a thermoelastic force of low intensity.
    Nanobeams have high thermal resistance and low thermal capacity: as it stands, it is not easy to independently control the thermal time constant r tfl and the resonance frequency of the structure ω Γ in which they are involved. In addition, the further the nanobeams are from the axis of the pivot, the higher the resonance frequency.
    As a result, the TPBA effect is optimized when:
    the stiffness of the beams dominates the overall stiffness of the structure,
    - the thermal time constant approaches the period T of oscillation T tfl "-. In the example above, this assumes an optimal position of the gauges relative to the pivot.
    However, these two conditions are not always compatible and a compromise is made in the dimensioning of MEMS / NEMS structures.
    STATEMENT OF THE INVENTION
    It is therefore an object of the present invention to provide a microelectronic structure comprising at least one mobile mass with controlled viscous damping, the optimization of the damping being decoupled, at least in large part, from the resonance frequency of the structure.
    The aim stated above is achieved by a microelectronic structure comprising at least one mobile mass mechanically connected to at least a first mechanical element and a second mechanical element distinct by first and second mechanical connection means respectively, and a polarization source in current or voltage of the first mechanical connection means, the first mechanical connection means comprising at least two connection elements and a thermal reservoir interposed between the two connection elements, at least one of the connection elements being at least partly made of a piezoresistive material and at least one of the connecting elements having thermoelastic properties. In addition, the thermal reservoir has a different thermal capacity from that of the connecting elements.
    According to the invention, by using at least one piezoresistive connecting element and at least one thermoelastic connecting element, a return action effect appears, this results in a return force which applies to the mobile mass. By implementing a thermal reservoir, the return force comprises a viscous damping term determined in part by the characteristics of the thermal reservoir. Thus, by dimensioning the thermal reservoir, the viscous damping applied to the moving mass can be maximized.
    The inventors have determined that the thermal time constant T th which fixes the delay of the dissipative force can be used as a means of dimensioning the dissipative force, and that this time constant can be made almost independent of the stiffness of the MEMS structure. /SPRING ROLLS.
    However, the dimensioning of the value of T th is complex, in particular so that its modification has no influence on the resonance frequency of the structure, since the time constant depends inter alia on the geometry of the beam and the dimensions mechanical elements in contact, which influence the resonant frequency.
    The inventors then designed connection means between the moving mass and a mechanical element comprising at least two connection elements connected to one another by a zone of thermal capacity different from that of the beams, this zone having no or very little influence on the stiffness of the connecting element and therefore on the resonant frequency of the structure. By choosing this thermal capacity, the time constant can be fixed.
    Thanks to the invention, without using external electronics and detection means, it is possible to control the viscous damping by the dimensioning of a thermal tank. There is also no need to control the atmosphere around the structure.
    Furthermore, the present invention offers the possibility of simply adjusting the dissipation factor of a resonator while maintaining a constant force noise level.
    Advantageously, the thermal capacity of the thermal reservoir is greater than the thermal capacities of the beams and very advantageously is at least equal to 5 times the greatest thermal capacity of the two connecting elements.
    In an exemplary embodiment, the first and second connecting elements are beams.
    The thermal reservoir may have a thickness greater than that of the beams and / or a greater surface in the plane.
    The present invention therefore relates to a microelectronic structure comprising at least one movable mass mechanically connected to at least a first mechanical element and a second mechanical element distinct by a first mechanical connection device and a second mechanical connection device respectively, a source of current or voltage polarization of the second mechanical connection device, in which the second mechanical connection device comprises at least first and second connection elements and at least one thermal reservoir interposed between the first and second connection elements, at least one of the first and second connecting elements being at least part made of a piezoresistive material, at least one of the first and second connecting elements having thermoelastic properties, and the thermal reservoir having a thermal capacity different from those of the first and second connecting elements, and in which the second movable connecting device and mass are arranged relative to each other so that a displacement of the moving mass applies mechanical stress to the second connecting device.
    Preferably, the thermal capacity of the thermal reservoir is greater than that of the first and second connecting elements, advantageously equal to at least 5 times the thermal capacity of each connecting element.
    The thermal reservoir may have a surface cross-section different from that of the cross-sections of the first and second connecting elements, and / or the thermal reservoir may be made of at least one material having a thermal capacity different from that of the materials of the first and second connecting elements, for example the first and second connecting elements are made of silicon and the thermal reservoir is made of aluminum alloy or beryllium.
    Preferably, the at least one connecting element having thermoelastic properties is made of at least one material having a coefficient of expansion greater than 10 ^ K 1 .
    For example, at least one of the first and second connecting elements is made of at least one piezoresistive material having a coefficient of expansion of less than 10 _7 K 1 and at least one of the first and second connecting elements is made of at least one non piezoresistive material and having a coefficient of expansion greater than 10 _7 K _1
    According to the invention, the second connecting device has both piezoresistive and thermoelastic properties. These properties are achieved by one and / or the other of the connecting elements. For example, only one of the connecting elements has these piezoresistive and thermoelastic properties, or the two connecting elements have these piezoresistive and thermoelastic properties or one of the connecting elements has piezoresistive properties and the other connecting element has properties and thermoelastics.
    Advantageously, the first and second connecting elements each comprise at least one straight beam.
    In an advantageous example at least one of the first and second connecting elements comprises at least one nanowire.
    The stiffness of the first and second connecting elements and of the mechanical connections between the first connecting element and the moving mass, and between the second connecting element and the second mechanical element, are preferably such that the second connecting device expands. mainly causes stress on the moving mass.
    Advantageously, the capacity of the thermal reservoir is chosen so that the second connection device has a thermal time constant T th such that T th <D r ~ l with ω Γ the resonant frequency of the microelectronic structure.
    In an exemplary embodiment, first and second connecting elements extend in a first direction, in which the thermal reservoir comprises a central zone connected to the first and second connecting elements of given section in the first direction and lateral zones in a second direction transverse to the first direction, said lateral zones having a dimension in the first direction greater than said given section of the central zone.
    According to an additional characteristic, the biasing means are connected between the first mechanical element and the second mechanical element, the first and second connecting devices and the moving mass being all or part of electrical conductors.
    The thermal reservoir may advantageously have a thermal resistance at most three times lower than the thermal resistances of the connecting elements.
    In an exemplary embodiment, the first mechanical element is an anchoring stud secured to a support and the movable mass is articulated in rotation relative to the anchoring stud and in which the second mechanical element is a second anchoring stud secured to the support.
    In another exemplary embodiment, the first mechanical element is an anchoring stud secured to a support and the movable mass is movable in translation along a direction relative to the support, and in which the second mechanical element comprises a mass mobile in translation relative to the support along said direction, the two mobile masses being in phase opposition.
    BRIEF DESCRIPTION OF THE DRAWINGS
    The present invention will be better understood on the basis of the description which follows and of the appended drawings in which:
    FIG. 1 is a schematic representation of an exemplary embodiment of a microelectromechanical structure according to the invention,
    FIG. 2 is a detailed view of the structure of FIG. 1,
    FIG. 3 is a detailed view of another example of connection means that can be used in the structure according to the invention,
    FIG. 4 is a detailed view of another example of connection means that can be used in the structure according to the invention,
    FIG. 5A is a detailed view of another example of connection means that can be used in the structure according to the invention,
    FIG. 5B is a detailed view of another example of connection means that can be used in the structure according to the invention,
    FIG. 6 is a detailed view of another example of connection means that can be used in the structure according to the invention,
    FIG. 7 is a schematic representation of another exemplary embodiment of a microelectromechanical structure according to the invention,
    - Figures 8A to 8F are schematic representations of the different steps of an exemplary method of producing a microelectronic structure according to the present invention.
    DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
    In the present application, the term “microelectronic structure” means a structure comprising microelectromechanical elements and / or nanoelectromechanical elements.
    In FIG. 1, an example of a microelectronic structure SI according to the invention can be seen. The structure extending along a mean plane P defined by the axes X and Y. The structure comprises a mobile mass 2 able to move relative to a support 4 formed for example by a substrate. The mobile mass 2 is connected to the support 4 by first connecting means 6 such that they allow the mobile mass 2 to move relative to the support 4.
    In the example shown, the first connecting means 6 comprises a pivot articulation having a pivot axis Z orthogonal to the plane P. The movable mass 2 is therefore able to move in rotation around the axis Z in the plane P. In the example shown, the pivot articulation comprises two beams 10 extends between an anchoring stud and the movable mass 2, the beams 10 having intersecting axes at a point O which is the intersection of the axis Z and of the plane P. The beams 10 deform in bending and allow the rotation of the mass around Z. It will be understood that the pivot connection could be achieved otherwise.
    The structure comprises second connecting means 14 between the movable mass 2 and the support 4. The second connecting means are electrically conductive. The structure also includes biasing means 15 for current or voltage of these second connecting means.
    As will be described in the following description, the second connecting means 14 are such that they exert a force on the movable mass by thermo-piezoresistive return action. The second connection means 14 are then oriented with respect to the first connection means 6, so that they are mechanically stressed by the moving mass 2 in movement and, so that the back action force Far applies to the less in the direction in which mass can move. In this example, the mobile mass 2 mainly moves in the direction X. The second connecting means 14 are then such that they exert a force of action Far in return on the mass along the axis X.
    The second connecting means 14 are urged by the movable mass 2. Preferably they are urged in traction and in compression, while allowing movements in bending in superposition of the compression or of the traction.
    According to the invention, the second connection means 14, shown alone in FIG. 2, comprise at least two connection elements 18, 20 connected by a thermal tank 22.
    The connecting element 18 is anchored to the movable mass 2 and to the thermal tank 22 and the connecting element 20 is anchored to the thermal tank 22 and to a second anchoring stud 24. The second connecting means 14 are such that 'They are capable of exerting mechanical forces on the mobile mass 2. For this, they have a certain stiffness and their connection to the second anchoring stud is such that the Far force preferentially displaces the mobile mass. In this exemplary embodiment, the second anchoring stud is not mobile.
    Preferably, the relative stiffnesses k e between the second anchoring stud and the anchoring of the first beam 18 to ground 6 along each of the axes of the beams 18, 20 are as close as possible to the smallest axial stiffness k p beams 18, 20, so that the forces generated by thermal expansion in at least one of the beams are applied to the anchors instead of promoting the movement of the thermal reservoir.
    Advantageously, the structure is such that:
    k e > 0, lk p
    The embodiment of the second connecting means shown in Figure 1 is very favorable. When the two beams are of axial stiffness k p , the stiffness of all the second connecting means along the axis of the beams is close to k p / 2.
    In this example and advantageously, the first 18 and second 20 connecting elements are rectilinear beams, one 18 being connected to the movable mass 2 and to the thermal reservoir 22 by its longitudinal ends, and the other 20 being connected to the thermal reservoir 22 and to the second anchoring stud 24 by its longitudinal ends.
    Preferably the two connecting elements 18, 20 have a large length and a small cross section. The length of the connecting elements is preferably 5 times greater than the transverse dimensions.
    Preferably, the beams 18 and 20 are of identical or similar dimensions, which makes it possible to have both mechanical stiffness of the second connection means and thermal insulation of the thermal tank 22 optimal.
    At least one of the connecting elements 18, 20 is made of piezoresistive material, for example silicon. In addition at least one of the connecting elements 18, 20 has thermoelastic properties. For example, at least one of the materials is made of Si, Al, SiGe, SiN, S1O2. In the case of S1O2 and SiN, a conductive track is made on the beam.
    In the present application, an element is considered to have thermoelastic properties if it has a coefficient of expansion at the working temperature greater than 10 _7 K _1 .
    The thermal tank 22 is such that it has a thermal capacity Cth different from the thermal capacities of the first 18 and second 20 connecting elements. Preferably Cth is greater than the thermal capacities of the connecting elements, very advantageously greater than at least 5 times the thermal capacities of the connecting elements. In the case where one of the connecting elements has a higher thermal capacity than that of the other connecting element, Cth is greater than the highest thermal capacity and advantageously 5 times greater than this.
    In addition, the thermal tank 22 is such that the stiffness of the second connection means is little modified compared to connection means without tank, formed for example by a single beam.
    For example, the second connecting means 14 are in one piece and made of the same material, for example in n or p doped Si, in AISi, SiGe, in Au.
    In this case, the reservoir has at least one section orthogonal to the surface axis X greater than that of a section of the beams 18 and 20. In the example shown, the thermal capacity Cth is obtained by producing an area between the beams 18 and 20 of larger surface in the plane P. As a variant, the tank could have the same dimensions as the beams in the plane P but a dimension in the direction Z larger. In another variant, the tank could include dimensions greater in the plane and in the direction Z than that of the beams, or else dimensions smaller in the plane and a dimension greater in the direction Z or alternatively dimensions greater in the plane P and a lower dimension in the direction Z. As a variant, the thermal reservoir could be made of a material different from that of the connecting elements having a thermal capacity different from those of the materials of the connecting elements 18, 20, advantageously greater. For example, the thermal reservoir could be made from an aluminum-based alloy, beryllium and the connecting elements could be made from Si.
    The thermal tank 22 could then have the same dimensions as the connecting elements 18, 20 while having a higher thermal capacity because it would be made of a material with higher thermal capacity, or else both be of a material with higher thermal capacity to that of the materials of the connecting elements and of different dimensions.
    It is conceivable that the thermal reservoir comprises different materials. In the case where the thermal reservoir has a thickness greater than that of the connecting elements, for example the increase in thickness can be obtained with the deposition of another material, such as AISi or Be.
    The polarization means comprise a voltage or current generator connected to the anchoring pads. The moving mass and the first connecting means are then also electrically conductive or have tracks made of an electrically conductive material.
    As a variant, it is possible to envisage connecting the generator between the second anchoring stud and the end of the beam 18 anchored on the movable mass. For this, an electrical connection element can be introduced to be in contact with the anchor located on the movable part. This element can have the shape of a coil forming a spring, so as not to introduce additional stiffness on the moving mass.
    The operation of the structure of FIG. 1 will now be described by considering a thermal reservoir having a thermal capacity greater than that of the beams 18, 20.
    The second connecting means, i.e. the two beams 18 and 20 and the thermal tank 22 are biased in voltage or in current.
    The beams undergo a self-heating by Joule effect.
    When the moving mass 2 is set in motion by an external stimulus, for example an acceleration, it moves around the axis Z and requests in tension or in compression the beams 18 and 20.
    Since at least one of the beams 18, 20 is made of piezoresistive material, the electrical resistance of the beam varies, then the power dissipated by the Joule effect, which has the effect of modifying the temperature of the beam and more generally of the second means of connection.
    However, since at least one of the connecting elements 18, 20 has thermoelastic properties, a force of action in return is generated by deformation of this element which is applied to the moving mass.
    Far can be described by formula III.
    We deduce that the effect of the Far force is maximum when the time constant reaches a value such that:
    Thanks to the invention, it is possible to adjust the value of τ η in order to fulfill the condition without having to modify the value of the resonance frequency of the structure.
    In fact, the thermal reservoir 22 increases the thermal inertia of the second connecting means, which has the effect of increasing the thermal time constant. In fact, the thermal reservoir, because of its higher thermal capacity Cth than those of beams, tends to "absorb" heat more than beams and therefore to delay the temperature variation induced by the modification of the Joule effect due to movement. mass.
    By increasing the thermal inertia, the mechanical effects in return on the structure on which the connecting elements are based are delayed. This increase in thermal inertia is optimized by the fact that the thermal reservoir is connected to the rest of the structure only by the beams, in order to maximize the thermal insulation. The beams are subjected to a controlled heating by the thermal reservoir disposed between the beams, the mechanical forces exerted by each element of beams on its fixed or mobile anchors are then synchronized.
    In a particularly interesting example, one of the beams only 18, 20 is made of piezoresistive material and has a low coefficient of expansion, ie less than ÎO ^ K 1 , and the other beam 20, 18 is not piezoresistive and has thermoelastic properties, ie a coefficient of expansion greater than ÎO ^ K 1 . This embodiment makes it possible to optimize the choice of piezoresistive material and of thermoelastic material in order to best exploit the effect of return action.
    In Figures 2 to 4, we can see other embodiments of the second connecting means. By way of comparison, we consider a structure in which the second connecting means would be a simple beam of length L, connecting the mobile part 2 to the second anchoring stud 24.
    In the different figures 2 to 4, Li denotes the dimension of the thermal reservoir in the direction X.
    In fig 2, the thermal reservoir 22 has a large dimension in the direction Y and a small dimension in the direction X. Each beam 18, 20 has a length L / 2.
    In FIG. 3, the thermal reservoir 22 has dimensions close in the X and Y directions, which makes it possible to have rapid thermalization of the thermal reservoir 22. Each beam has a length L / 2.
    In FIG. 4, the thermal reservoir comprises a central portion 22.1 of dimension along the reduced X axis and two end portions 22.3 of dimensions along the larger X direction. Each beam has a length L / 2. This embodiment has the advantage of being able to keep second connecting means whose total dimension along the axis X is close to the sum of the dimensions along X of the two beams. Thus the integration of the thermal reservoir has a reduced impact on the size of the structure.
    The second connecting means of Figures 2 to 4 have a stiffness close to a single beam of length L, which allows little or no change in the vibration modes of the entire structure. In addition, preferably, the electrical resistance of the thermal tank is low. Preferentially it can be considered that R Res <θ · 5 Rpoutre> which keeps an electrical resistance of the same order of magnitude as that specified by the beams 18, 20 of smaller cross section and which is close or equal to that of a single beam. The increase in the electrical consumption of the structure is then limited.
    Preferably, the thermal resistance of the thermal reservoir is low, advantageously it is at most three times lower than the thermal resistances of the beams, and preferably 5 times lower than the thermal resistances of the beams, which promotes rapid distribution of the thermal energy towards the plate and not towards the anchors of the beams at the second stud.
    At a given thermal reservoir volume, a compact reservoir in three dimensions is preferred in order to promote the rapid distribution of energy within this plateau.
    In Figure 6, we can see another embodiment of the second connecting means in which the connecting elements 118, 120 are not parallel and are not aligned. The thermal tank 122 has the shape of a pentagon.
    Regarding the connecting elements, they are preferably formed by rectilinear beams but it can be envisaged that they comprise several portions of beams whose axes form an angle between them. The angle is chosen to be small so that the action in return in the second connecting means preferably serves to apply a force to the anchors and not to deform the connecting elements.
    In FIG. 5A, we can still see another embodiment of the second connection means in which the connection elements 218, 220 are connected to the thermal tank 222 on an edge thereof and not in the central part thereof. The second connecting means do not have a plane of symmetry containing X and Z.
    In FIG. 5B, we can see yet another embodiment of the second connection means comprising several first connection elements 318 and a second connection element 320 connected to the thermal tank 322. It could be envisaged that they comprise alternately or in addition several second connecting elements 320.
    In another advantageous exemplary embodiment, it is possible to envisage replacing the beams forming the connecting elements with beams of submicrometric section, more particularly with nanowires whose dimensions in a plane perpendicular to their length are less than about 500 nm, of which the sum of the sections of all the nanowires would be close to or identical to that of the beam 18 or 20. The thermal resistance of the connecting elements is then advantageously increased. Indeed, the thermal conductivity of silicon nanowires drops by several orders of magnitude at these dimensions. It is then possible to produce a structure with the same stiffness and the same electrical resistance and an increased thermal resistance. This increase in thermal resistance makes it possible to promote the evacuation of thermal energy towards the plate and not towards the anchors of the beams at the second anchoring stud and at ground.
    This possibility of increasing the thermal resistance provides an additional degree of freedom to modify the thermal time constant. The number of possibilities in the realization of the achievable structures is then increased.
    In Figure 7, we can see another example of microelectronic structure according to the invention.
    This structure differs from that of FIG. 1 in that on the one hand they comprise two mobile masses 506 connected by the second connecting means 514 according to the invention comprising a thermal tank 522 and two beams 518, 520. In addition, the moving masses 506 are suspended from anchoring pads 512, 524 by springs 528, allowing the moving masses to move in the plane along the axis X and to vibrate in phase opposition. The thermal tank is then stationary along the X axis, which makes it possible not to restrict the dimensions of the thermal tank.
    Indeed, the structure has a vibration mode for which the two masses vibrate in phase opposition. For this mode, the mass of the thermal reservoir can be arbitrary because its inertia does not participate in the properties of the mode (inertia, resonance frequency).
    It should be noted that a structure, in which the two moving masses are in phase does not apply deformation to the connecting elements and is not subjected to an effect of action in return.
    The mass can have any movement, linear movements or in rotation. In addition, the movements can be movements in the plane, movements out of plane and / or a combination of movements in the plane and movements out of plane.
    In general, the thermal reservoir can participate in the global inertia of MEMS or NEMS. This can change the resonant frequency of the system for example. It is therefore preferably sought to have a mass of the thermal reservoir that is negligible compared to the rest of the structure, for example a mass less than 20% of the mass of the structure. This is for example the case in the structure of FIG. 2.
    In the examples described, the second connection means comprise a thermal tank, but it could be envisaged that they comprise several thermal tanks, for example two thermal tanks connected by a beam, the second connecting means then comprising three beams and two thermal tanks.
    Thanks to the invention, the thermal time constant of the beam system generating the feedback action effect can be chosen by dimensioning the thermal reservoir (s), by modifying very slightly the mechanical parameters associated with MEMS (stiffness, mechanical inertia , etc.) and the electrical resistances associated with the return action beams. Thus it is possible to produce a structure making it possible to fulfill, or at least approach, the condition r th a) r ~ l for which the control of the viscous dissipation force is most favorable.
    The thermal inertia can be modified from 1 to 3 orders of magnitude, i.e. multiplied by a factor between 10 and 1000 by extending the thermal reservoir in the directions transverse to the main direction of the beams. For example, consider a beam 5 pm long and 250 nm wide and thick, its thermal inertia can be increased by at least a factor of 100 by inserting a thermal reservoir of dimensions 5 pm x 2.5 pm x 2.5pm between two half beams.
    The thermo-piezoresistive return action effect makes it possible to change the mechanical response of a MEMS / NEMS resonator without modifying the force noise of thermal origin, unlike pneumatic damping systems (pressure control in the MEMS / NEMS cavity). In the case of active damping systems, complex electronics must be implemented: by reinjecting measurement noise into the feedback force, a force noise is generated on the MEMS, which can reduce its performance.
    The present invention is particularly effective for working frequencies for which the major part of the kinetic energy of the microelectronic structure is located in the mobile mass, preferably at least 70%.
    In the case of the structure of FIG. 2, the working frequencies can be between 1 kHz and 100 kHz, for example between 3 kHz and 20 kHz.
    In the case of the structure of FIG. 7, the working frequencies can be of the order of 1 MHz, or even a few tens of MHz without this being limiting.
    By way of example only, the thermal time constant of a structure according to the invention will be estimated. The second connection means include:
    - two beams with a length of 2.5 μm and a section of 250 × 250 nm 2 in silicon,
    - a thermal reservoir of dimensions 5 × 5 pm 2 and of thickness 250 nm also in silicon.
    The mass thermal capacity of silicon is approximated by that of solid silicon at 700 J / kg. The thermal conductivity is taken equal to 80 W / m / K for p-doped silicon at 5. 10 19 cm -3 due to the small section of the beam. In the case of solid silicon, the thermal conductivity is equal to 148 W / m / K.
    By considering a simplified model which concentrates the thermal inertia in the thermal reservoir and the thermal resistance in the beams, an estimate of the thermal time constant can be made. This model appears reasonable given the differences in dimensions between these elements:
    - The thermal resistance of the system connected to the outside by the two beams is estimated at 0.25 MK / W. The two beams are in parallel from a thermal point of view R th
    The thermal capacity of the thermal tank is estimated at
    10.2 pJ / K.
    A thermal constant of the order of 2.5 ps is estimated. In the absence of a thermal reservoir (the second connecting elements would only have a beam of 5 pm long and 250 nm in width and thickness), a time constant in the range 50 ns is close to two orders of greatness below. If the thickness of the thermal reservoir is increased to 2.5 μm, the time constant can reach 25 ps, or almost three orders of magnitude above the beam alone.
    To get closer to the condition T th M r ~ l, with a time constant of 25 ps, the resonant frequency range of the MEMS / NEMS structure that can be addressed with a beam of dimension 5 pm x 250 x 250 nm 2 is between 7 kHz and 3.5 MHz: these orders of magnitude are compatible with many MEMS / NEMS applications such as gyrometers, accelerometers, etc. using beams of smaller dimensions, the effect can be tuned for frequencies in the range of ten to one hundred MHz.
    We will now describe such a method of producing a structure according to the present invention, of which we can see schematically represented different steps in FIGS. 8A to 8F.
    For example, an SOI (Silicon on insulator) structure is used comprising a substrate 402, a buried oxide layer BOX (Buried oxide) 404, and a silicon layer 406. The silicon layer 406 has for example a thickness of l '' order of 200 nm. In general, the layer 406 can be Si, SiGe or Ge poly or monocrystalline.
    A structuring of the silicon layer 406 is then carried out, for example by photolithography and etching with stop on the oxide layer 406, which makes it possible to define the connection means.
    The element thus obtained is represented in FIG. 8A.
    During a next step, an oxide layer 410 is deposited on the silicon layer 406 to fill the previously etched areas 408, an etching of the oxide layer 410 is then carried out so that only a portion of oxide deposited on the layer of silicon 406 and connecting the oxide filling the trenches. Etching can be carried out by dry etching with stop on Si or by wet etching, for example using a solution based on sulfuric acid. In the case where the thermal reservoir has a thickness different from that of the connecting elements, provision may be made for the zone intended to form the thermal reservoir.
    The element thus obtained is represented in FIG. 8B.
    During a following step, a deposit of a layer of silicon 412 is formed. The layer 412 is obtained for example by epitaxial growth, and has a typical thickness of 1 to 50 μm, for example 10 μm. More generally, the layer 412 can consist of Si, SiGe, Ge, poly or monocrystalline or of a metallic material; the deposition can be carried out by epitaxy or by physical / chemical vapor phase deposition (PVD / CVD: Physical / Chemical Vapor Deposition) methods.
    The element thus obtained is represented in FIG. 8C.
    In a next step, electrical contacts 414 are produced. To do this, a metal layer is deposited (AISi or Au for example), the zones to be removed and preserved are distinguished by photolithography. The metal layer is then etched by dry etching with stop on Si or by selective wet etching with respect to Si so as to keep only the contacts 414.
    The element thus obtained is represented in FIG. 8D.
    In a following step, the silicon layers 406 and 412 are structured to define the moving mass and the first connecting means and the second connecting means, for example by photolithography and deep etching with stopping on the oxide layers 404 and 410.
    The element thus obtained is represented in FIG. 8E.
    In a following step, the mobile mass and the first and second connecting means are released, for example by wet etching of the oxide 404, for example by means of liquid hydrofluoric acid (HF) and / or vapor. It is an engraving at the time. Hydrofluoric acid is left in contact with the oxide layer for the time necessary to release the mobile mass, the first and second bonding means while leaving the oxide layer between the substrate and the fixed parts.
    The element thus obtained is represented in FIG. 8F.
    MEMS / NEMS micro and nanostructures according to the invention offering means for controlling viscous damping can for example be implemented in MEMS / NEMS micro-sensors and micro-actuators.
    权利要求:
    Claims (15)
    [1" id="c-fr-0001]
    1. Microelectronic structure comprising:
    at least one mobile mass (2) mechanically connected to at least a first mechanical element and a second mechanical element distinct by a first mechanical connection device (6) and a second mechanical connection device (14) respectively
    a source of bias (15) in current or in voltage of the second mechanical connection device (14), in which the second mechanical connection device (14) comprises at least a first (18) and a second (20) element of connection and at least one thermal reservoir (22) interposed between the first and second connection elements, at least one of the first and second connection elements being at least part made of a piezoresistive material, at least one of the first and second connecting elements having thermoelastic properties, and the thermal reservoir (22) having a thermal capacity different from those of the first (18) and second (20) connecting elements, and in which the second connecting device (14) and the movable masses (2) are arranged with respect to each other so that a displacement of the movable mass (2) applies mechanical stress to the second connecting device (14).
    [2" id="c-fr-0002]
    2. Microelectronic structure according to claim 1, in which the thermal capacity of the thermal reservoir (22) is greater than that of the first (18) and second (20) connecting elements, advantageously equal to at least 5 times the thermal capacity of each connecting element (18, 20).
    [3" id="c-fr-0003]
    3. Microelectronic structure according to claims 1 or 2, wherein the thermal reservoir (22) has a surface cross section different from that of the cross sections of the first (18) and second (20) connecting elements.
    [4" id="c-fr-0004]
    4. Microelectronic structure according to one of claims 1 to 3, in which the thermal reservoir (22) is made of at least one material having a thermal capacity different from that of the materials of the first (18) and second (20) elements. connection, for example the first (18) and second (20) connection elements are made of silicon and the thermal reservoir is made of aluminum alloy or beryllium.
    [5" id="c-fr-0005]
    5. Microelectronic structure according to one of claims 1 to 4, wherein the at least one connecting element having thermoelastic properties is made of at least one material having a coefficient of expansion greater than 10 _7 K _1 .
    [6" id="c-fr-0006]
    6. Microelectronic structure according to one of claims 1 to 5, in which at least one of the first and the second connecting element is made of at least one piezoresistive material having a coefficient of expansion less than 10 _7 K 1 and at at least one of the first and the second connecting element is made of at least one non-piezoresistive material and having a coefficient of expansion greater than 10 _7 K _1 .
    [7" id="c-fr-0007]
    7. Microelectronic structure according to one of claims 1 to 6, wherein the first (18) and second (20) connecting elements each comprise at least one straight beam.
    [8" id="c-fr-0008]
    8. Microelectronic structure according to one of claims 1 to 7, wherein at least one of the first and second connecting elements comprises at least one nanowire.
    [9" id="c-fr-0009]
    9. Microelectronic structure according to one of claims 1 to 8, in which the stiffnesses of the first (18) and second (20) connecting elements and mechanical connections between the first connecting element and the moving mass and between the second element of connection and the second mechanical element are such that an expansion of the second connection device mainly causes a force on the moving mass.
    [10" id="c-fr-0010]
    10. Microelectronic structure according to one of claims 1 to 9, in which the capacity of the thermal reservoir (22) is chosen so that the second connecting device (14) has a thermal time constant T th such that T th <D r ~ l with ω Γ the resonant frequency of the microelectronic structure.
    [11" id="c-fr-0011]
    11. Microelectronic structure according to one of claims 1 to 10, in which first and second connecting elements extend in a first direction, in which the thermal reservoir comprises a central zone connected to the first and second section connecting elements given in the first direction and lateral zones in a second direction transverse to the first direction, said lateral zones having a dimension in the first direction greater than said given section of the central zone.
    [12" id="c-fr-0012]
    12. Microelectronic structure according to one of claims 1 to 11, in which the biasing means (15) are connected between the first mechanical element (12) and the second mechanical element (24), the first (6) and second ( 14) connecting devices and the moving mass (2) being all or part of electrical conductors.
    [13" id="c-fr-0013]
    13. Microelectronic structure according to one of claims 1 to 12, wherein the thermal reservoir has a thermal resistance at most three times lower than the thermal resistances of the connecting elements.
    [14" id="c-fr-0014]
    14. Microelectronic structure according to one of claims 1 to 13, in which the first mechanical element (12) is an anchoring stud secured to a support and the movable mass (2) is articulated in rotation relative to the stud d anchoring and in which the second mechanical element (24) is a second anchoring stud secured to the support.
    [15" id="c-fr-0015]
    15. Microelectronic structure according to one of claims 1 to 13, in which the first mechanical element is an anchoring stud secured to a support and the mobile mass is movable in translation along a direction relative to the support and wherein the second mechanical element comprises a mass movable in translation relative to the support along said direction, the two movable masses being in phase opposition.
    S.60861
    N® - ►- <
    > x
    类似技术:
    公开号 | 公开日 | 专利标题
    EP3339242B1|2019-06-19|Microelectronic structure comprising means for controlling viscous damping
    EP2617129B1|2014-07-23|Suspended-beam device and piezoresistive means for detecting the displacement thereof
    EP2796884A1|2014-10-29|Microelectromechanical and/or nanoelectromechanical structure with ajustable quality factor
    EP2617130B1|2019-10-02|Resonant piezoresistive detector having a resonator connected elastically to the supporting member of the detector, and process for manufacturing said detector
    EP2367015B1|2014-04-23|Force sensor with reduced noise
    EP2211185A1|2010-07-28|Inertial sensor unit or resonant sensor with surface technology, with out-of-plane detection by strain gauge
    FR2954505A1|2011-06-24|MICROMECHANICAL STRUCTURE COMPRISING A MOBILE PART HAVING STOPS FOR OFFLINE SHIFTS OF THE STRUCTURE AND METHOD FOR CARRYING OUT THE SAME
    FR2941532A1|2010-07-30|SENSOR DEVICE AND METHOD FOR MANUFACTURING SAME
    EP2949621B1|2016-11-09|Capacitive micro and/ or nanoelectronic device having increased compactness
    FR2964653A1|2012-03-16|PLAN-OPERATING DEVICE AND METHOD OF MANUFACTURING THE DEVICE
    EP2446523B1|2013-04-03|Micromechanical device for amplifying a vibrating movement
    EP3159300B1|2020-02-12|Electrothermal activated mems and/or nems structure having at least two differently polarised thermal actuators
    EP3234536B1|2022-01-05|Dynamic pressure sensor with improved operation
    FR3059312A1|2018-06-01|METHOD FOR PRODUCING AN ELECTROMECHANICAL DEVICE
    EP3365270B1|2020-01-08|Electrothermally actuated microelectromechanical and/or nanoelectromechanical structure providing increased efficiency
    EP3558862B1|2020-10-21|Microelectronic structure with viscous damping controlled by controlling a thermo-piezoresistive effect
    FR3052765A1|2017-12-22|MICROELECTROMECHANICAL AND / OR NANOELECTROMECHANICAL DEVICE WITH OFF-PLAN DISPLACEMENT COMPRISING SURFACE-VARYING CAPACITIVE MEANS
    FR3014093A1|2015-06-05|MASS-SPRING SYSTEM WITH LOW TRANSVERSE DEBATE
    FR3102855A1|2021-05-07|HIGH-PERFORMANCE ACCELEROMETER WITH REDUCED DIMENSIONS
    WO2018172661A1|2018-09-27|Microdevice comprising at least two movable elements
    FR3058409A1|2018-05-11|ARTICULATED MICROELECTROMECHANICAL AND / OR NANOELECTROMECHANICAL DEVICE WITH OFF-PLAN SHIFT
    同族专利:
    公开号 | 公开日
    US20180183404A1|2018-06-28|
    EP3339242A1|2018-06-27|
    EP3339242B1|2019-06-19|
    US10868511B2|2020-12-15|
    FR3061166B1|2019-05-31|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US6675578B1|2000-05-22|2004-01-13|Microsoft Corporation|Thermal buckle-beam actuator|
    FR3042788B1|2015-10-21|2017-12-08|Commissariat Energie Atomique|MICROELECTROMECHANICAL AND / OR NANOELECTROMECHANICAL STRUCTURE WITH ELECTROTHERMIC ACTUATURE PROVIDING IMPROVED PERFORMANCE|US10914777B2|2017-03-24|2021-02-09|Rosemount Aerospace Inc.|Probe heater remaining useful life determination|
    US11060992B2|2017-03-24|2021-07-13|Rosemount Aerospace Inc.|Probe heater remaining useful life determination|
    US10962580B2|2018-12-14|2021-03-30|Rosemount Aerospace Inc.|Electric arc detection for probe heater PHM and prediction of remaining useful life|
    US11061080B2|2018-12-14|2021-07-13|Rosemount Aerospace Inc.|Real time operational leakage current measurement for probe heater PHM and prediction of remaining useful life|
    法律状态:
    2018-01-02| PLFP| Fee payment|Year of fee payment: 2 |
    2018-06-29| PLSC| Publication of the preliminary search report|Effective date: 20180629 |
    2019-12-31| PLFP| Fee payment|Year of fee payment: 4 |
    2020-12-28| PLFP| Fee payment|Year of fee payment: 5 |
    2021-12-31| PLFP| Fee payment|Year of fee payment: 6 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1663258|2016-12-22|
    FR1663258A|FR3061166B1|2016-12-22|2016-12-22|MICROELECTRONIC STRUCTURE COMPRISING MEANS FOR MONITORING VISCOUS DAMPING|FR1663258A| FR3061166B1|2016-12-22|2016-12-22|MICROELECTRONIC STRUCTURE COMPRISING MEANS FOR MONITORING VISCOUS DAMPING|
    EP17209139.9A| EP3339242B1|2016-12-22|2017-12-20|Microelectronic structure comprising means for controlling viscous damping|
    US15/850,453| US10868511B2|2016-12-22|2017-12-21|Microelectronic structure comprising means of control of viscous damping|
    [返回顶部]